ITRS released a report forecasting that the chip or failure of Moore’s Law in 2021.
We know that the silicon chip manufacturing technology is approaching physical limits. “China Science and Technology News,” analysts said, in order to meet the growth requirements of Moore’s Law, either to find new materials instead of silicon – the ability of graphene, molybdenum disulfide or a single atomic layer of germanium or innovative ways to develop a silicon chip – more in line with the requirements efficient integration of new material on a silicon substrate. In contrast, completely replace the existing technology roadmap, not only requires a lot of capital investment, industry full of competition and collaboration is also essential; technically mature deep potential, while the cost is much lower, it is difficult to bring tremendous new formats.
According to reports, North Carolina State University recently announced that the Office of the Army Research and university researchers to develop a new method called “Epitaxial Film Law”, new functional materials can be more integrated iron and other materials onto computer chips. It is understood that the new functional materials with a silicon chip, the future will help to create a more compact, intelligent electronic devices and systems, many of the past that make the impossible possible: for example, data acquisition, acquisition, processing, and other kinds of tasks can be completed on a compact chip, in addition to the current light-emitting diode (LED) used in the sapphire substrate is not compatible with the computer equipment problems will be solved.
For now, a number of new functional materials, such as ferroelectric and ferromagnetic properties of multiferroic material, the surface of the conductive properties of topological insulators and new ferroelectric materials, in sensors, nonvolatile memory and MEMS areas good prospects. However, a problem currently facing these materials is that they are still not to be integrated onto a silicon chip. Currently, new studies help to break the limit.
The researchers said that the so-called “thin-film epitaxial method,” is that they designed a titanium nitride layer and a layer of yttria stabilized zirconia plate is compatible with both silicon plate layer for connecting new functional materials with different electronic products, silicon the underlying substrate (platform), then use a buffer film its development of the functional material and the silicon chip together. These films by side with the crystal structure of a combination of new functional materials, and the other side of the underlying connection matrix-bound to play a role. The researchers said that with the changes integrated functional material, film composition used will also change. For example, when using titanium nitride integrated iron material, film composition magnesium oxide, strontium and lanthanum strontium manganese oxide these four types, but if you want to integrate topological insulator, then only need magnesium oxide and nitride titanium can be.
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